| PART |
Description |
Maker |
| AN1232 |
Ruggedness improvement of RF DMOS devices
|
STMicroelectronics
|
| AN1232 |
RUGGEDNESS IMPROVEMENT OF RF DMOS DEVICES
|
SGS Thomson Microelectronics
|
| TDA9177 |
YUV transient improvement processor(YUV瞬时改进处理
|
NXP Semiconductors
Philips Semiconductors
|
| TCU20A60 |
FRD - For Power Factor Improvement High Frequency Rectification
|
Nihon Inter Electronics...
NIEC[Nihon Inter Electronics Corporation]
|
| TCU10A60 |
FRD - For Power Factor Improvement High Frequency Rectification
|
Nihon Inter Electronics...
NIEC[Nihon Inter Electronics Corporation]
|
| TDA9170 |
YUV picture improvement processor based on histogram modification
|
Philips Semiconductors
|
| TDA9178 TDA9178T |
YUV one chip picture improvement based on luminance vector-, colour vector- and spectral processor(基于亮度向量、彩色向量和光谱处理的YUV单片图像改进处理
YUV one chip picture improvement based on luminance vector-/ colour vector- and spectral processor
|
Philips Semiconductors
NXP Semiconductors
|
| STH140N6F7-2 STH140N6F7-6 |
High avalanche ruggedness
|
STMicroelectronics
|
| CMLV12S12-100 CMLV12S12-120 CMLV12S12-150 CMLV12S1 |
Encapsulated for Added Ruggedness
|
Wall Industries,Inc.
|
| STL11N6F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| STL8N6LF6AG |
High avalanche ruggedness
|
STMicroelectronics
|
